1N5615_07 Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5615 thru 1N5623
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
“A” Package
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5615 to 1N5623 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
• Fast recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 38^oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 1.0 Amps @
T_A = 55ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver axial-leads and no finish.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
WORKING MINIMUM
AVERAGE FORWAR REVERSE CAPACITANCE MAXIMUM REVERSE
PEAK BREAKDOWN RECTIFIED
D
CURRENT
(MAX.)
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
V_RWM
VOLTAGE
V_BR @ 50μA
CURRENT
I_O @ T_A
(NOTE 1)
VOLTAGE
(MAX.)
V_F @ 3A
(MAX.)
I_R @ V_RWM
C @ V_R =12 V CURRENT
f=1 MHz
I_FSM
(NOTE 2)
(MAX.)
(NOTE 3)
t_rr
VOLTS
VOLTS
AMPS
VOLTS
μA
pF
50^oC 100^oC
25^oC 100^oC
AMPS
ns
1N5615
200
220
1.00 .750 .8 MIN.
.5
25
45
25
150
1N5617
400
440
1.00 .750
.5
25
35
25
150
1N5619
600
660
1.00 .750
.5
25
25
25
250
1N5621
800
880
1.00 .750
1.6
.5
25
20
25
300
1N5623
1000
1100
1.00 .750
MAX.
.5
25
15
25
500
NOTE 1: From 1 Amp at T_A = 55^oC, derate linearly at 5.56 mA/ ^oC to 0.75 Amp at T_A = 100^oC. From T_A = 100^oC,
derate linearly at 7.5 mA/^oC to 0 Amps at T_A = 200 ^oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T_J(max) does not exceed 175 ^oC.
NOTE 2: T_A = 100 ^oC, f = 60 Hz, I_O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: I_F = 0.5 A, I_RM = 1 A, I_R(REC) = 0.250 A
Copyright © 2007
1-15-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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