1N5615US Datasheet, PDF (1/3 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “A”
or D-5A
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
• Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
• Fast recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 7^oC/W junction to end cap
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 1.0 Amps @
T_A = 55ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING MINIMUM
AVERAGE FORWAR REVERSE CAPACITANCE MAXIMUM REVERSE
PEAK BREAKDOWN RECTIFIED
D
CURRENT
(MAX.)
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
V_RWM
VOLTAGE
V_BR @ 50μA
CURRENT
I_O @ T_A
(NOTE 1)
VOLTAGE
(MAX.)
V_F @ 3A
(MAX.)
I_R @ V_RWM
C @ V_R =12 V CURRENT
f=1 MHz
I_FSM
(NOTE 2)
(MAX.)
(NOTE 3)
t_rr
VOLTS
VOLTS
AMPS
VOLTS
μA
pF
50^oC 100^oC
25^oC 100^oC
AMPS
ns
1N5615US
200
220
1.00 .750 .8 MIN.
.5
25
45
25
150
1N5617US
400
440
1.00 .750
.5
25
35
25
150
1N5619US
600
660
1.00 .750
.5
25
25
25
250
1N5621US
800
880
1.00 .750
1.6
.5
25
20
25
300
1N5623US 1000
1100
1.00 .750
MAX.
.5
25
15
25
500
NOTE 1: From 1 Amp at T_A = 55^oC, derate linearly at 5.56 mA/ ^oC to 0.75 Amp at T_A = 100^oC. From T_A = 100^oC,
derate linearly at 7.5 mA/^oC to 0 Amps at T_A = 200 ^oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T_J(max) does not exceed 175 ^oC.
NOTE 2: T_A = 100 ^oC, f = 60 Hz, I_O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: I_F = 0.5A, I_RM = 1A, I_R(REC) = 0.250 A
Copyright © 2007
1-15-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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