1N5614_07 Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
“A” Package
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65^oC to +200^oC
• Thermal Resistance: 38^oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 1.0 Amps @
T_A = 55ºC and 0.75 Amps @ T_A = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
inventory had solid Silver axial-leads and no finish.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
WORKING
MINIMUM
AVERAGE
FORWARD
REVERSE
MAXIMUM REVERSE
PEAK
BREAKDOWN
RECTIFIED
VOLTAGE
CURRENT
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
CURRENT
(MAX.)
(MAX.)
CURRENT (NOTE 3)
VOLTAGE V_RWM V_BR @ 50μA
I_O @ T_A
V_F @ 3A
I_R @ V_RWM
I_FSM
t_rr
(NOTE 1)
(NOTE 2)
VOLTS
VOLTS
AMPS
VOLTS
μA
AMPS
μs
55^oC
100^oC
25^oC
100^oC
1N5614
200
220
1.00
.750
0.5
25
30
2.0
1N5616
400
440
1.00
.750
0.8 MIN.
0.5
25
30
2.0
1N5618
600
660
1.00
.750
0.5
25
30
2.0
1N5620
800
880
1.00
.750
1.3 MAX.
0.5
25
30
2.0
1N5622
1000
1100
1.00
.750
0.5
25
30
2.0
NOTE 1: From 1 Amp at T_A = 55^oC, derate linearly at 5.56 mA/ ^oC to 0.75 Amp at T_A = 100^oC. From T_A = 100^oC,
derate linearly at 7.5 mA/^oC to 0 Amps at T_A = 200 ^oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T_J(max) does not exceed 175 ^oC.
NOTE 2: T_A = 100^oC, f = 60 Hz, I_O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: I_F = 0.5A, I_RM = 1A, I_R(REC) = 0.250A
Copyright © 2007
1-15-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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