1N5550US Datasheet, PDF (1/2 Pages) Microsemi Corporation – VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5550US thru 1N5554US
VOIDLESS HERMITICALLY SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “standard recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded packages for thru-hole mounting (see separate data
sheet for 1N5550 thru 1N5554). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speeds.
APPEARANCE
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5550 to 1N5554 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/420
• Axial-leaded equivalents also available (see separate
data sheet for 1N5550 thru 1N5554)
• Standard recovery 5 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +200^oC
• Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 11^oC/W junction to endcap
• Thermal Impedance: 1.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 5 Amps @
T_EC = 55ºC (see Note 1)
• Forward Surge Current (8.3 ms half sine): 100 Amps
• Solder temperatures: 260^oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 539 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
MINIMUM WORKING AVERAGE
AVERAGE
TYPE
BREAKDOWN PEAK
RECTIFIED RECTIFIED FORWARD VOLTAGE REVERSE REVERSE
VOLTAGE
V_BR
@50μA
VOLTS
REVERSE
VOLTAGE
V_RWM
VOLTS
CURRENT
I_O1 @
T_EC=+55^o
C
CURRENT
I_O2 @
T_A=+55^oC
Note 2
V_F @ 9A (pk)
MIN.
VOLTS
MAX.
VOLTS
CURRENT
I_R @ V_RWM
μA
RECOVERY
t_rr
Note 3
μs
Note 1
AMPS
AMPS
1N5550US
220
200
5
3
0.6V (pk) 1.2V (pk)
1.0
2.0
1N5551US
440
400
5
3
0.6V (pk) 1.2V (pk)
1.0
2.0
1N5552US
660
600
5
3
0.6V (pk) 1.2V (pk)
1.0
2.0
1N5553US
880
800
5
3
0.6V (pk) 1.3V (pk)
1.0
2.0
1N5554US
1100
1000
5
3
0.6V (pk) 1.3V (pk)
1.0
2.0
NOTE 1: Derate linearly at 66.6 mA/ºC above T_EC = 100ºC. An I_O of up to 6 Amps is allowable provided that appropriate heat sinking or
forced air cooling maintains the junction temperature at or below +200C.
NOTE 2: Derate linearly at 25 mA/ºC above T_A = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficient controlled where T_J(MAX) rating is not exceeded.
NOTE 3: I_F = 0.5 A, I_RM = 1.0 A, I_R(REC) = .250 A
Copyright © 2006
11-27-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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