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1N5518BUR_08 Datasheet, PDF (1/2 Pages) Microsemi Corporation – ZENER DIODE, 500mW
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ZENER DIODE, 500mW
– LEADLESS PACKAGE FOR SURFACE MOUNT
– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/437
DEVICES
1N5518BUR-1 Thru 1N5546BUR-1
And
CDLL5518 Thru CDLL5546D
QUALIFIED LEVELS
JAN
JANTX
JANTXV
MAXIMUM RATING AT 25°C
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
Forward Voltage @ 200mA:
-65°C to +175°C
500mW @ TEC = +125°C
10mW / °C above TEC = +125°C
1.1 volts maximum
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
(NOTE 1)
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(NOTE 2)
VOLTS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
ZENER
TEST
CURRENT
IZT
mA
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAX. ZENER
IMPEDANCE
B-C-D
SUFFIX
ZZT @ IZT
(NOTE 3)
Ohms
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
MAXIMUM REVERSE LEAKAGE
CURRENT
IR
(NOTE 4)
μAdc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
VR = VOLTS
NON &
A-
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
B-C-D-
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
21.0
22.4
23.0
25.2
24.0
27.0
28.0
29.7
B-C-D
SUFFIX
MAIMUM
DC ZENER
IZM
mA
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
REGULATION
FACTOR
CURRENT
ΔVZ
(NOTE 5)
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
LOW
VZ
CURRENT
IZL
mA
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A”
suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for
±1.0%.
NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT.
NOTE 4: Reverse leakage currents are measured at VR as shown on the table.
NOTE 5: ΔVZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction
in thermal equilibrium.
LDS-0037 Rev. 1 (072304)
D
G
G1
F
S
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
1.60 1.70 0.063 0.067
F
0.41 0.55 0.016 0.022
G
3.30 3.70 .130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN
.001 MIN
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (RθJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZθJX):
35°C/W maximum
POLARITY: Diode to be operated with the banded
(cathode) end positive.
MOUTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE) of this
device is approximately +6PPM/°C. The COE of the
Mounting Surface System should be selected to
provide a suitable match with this device.
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