1N5415_08 Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5415 thru 1N5420
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5415 to 1N5420 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 50 to 600 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5415US thru 1N5420US)
• Fast recovery 3 Amp rectifiers 50 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 20^oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 1.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 3 Amps @ T_A
= 55ºC and 2 Amps @ T_A = 100ºC (see Note 1)
• Forward Surge Current (8.3 ms half sine): 80 Amps
• Solder temperatures: 260^oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper except for JANS with solid
Silver (Ag) and no finish
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 750 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
MINIMUM
FORWARD
MAXIMUM
MAXIMUM
AVERAGE
BREAKDOWN
VOLTAGE
REVERSE
REVERSE
RECTIFIED
TYPE
V_RWM
VOLTAGE
V_BR @ 50μA
VOLTS
V_F @ 9 A
MIN.
VOLTS
MAX.
VOLTS
CURRENT
I_R @ V_RWM
25^oC
100^oC
µA
µA
RECOVERY
TIME t_rr
(NOTE 2)
ns
CURRENT I_O
(NOTE 1)
55^oC
100^oC
AMPS AMPS
1N5415
50V
55V
0.6
1.5
1.0
20
150
3.0
2.0
1N5416
100V
110V
0.6
1.5
1.0
20
150
3.0
2.0
1N5417
200V
220V
0.6
1.5
1.0
20
150
3.0
2.0
1N5418
400V
440V
0.6
1.5
1.0
20
150
3.0
2.0
1N5419
500V
550V
0.6
1.5
1.0
20
250
3.0
2.0
1N5420
600V
660V
0.6
1.5
1.0
20
400
3.0
2.0
NOTE 1: From 3.0 Amps at T_A = 55^oC, derate linearly at 22 mA/ ^oC to 2.0 Amps at T_A = 100^oC. Above T_A = 100^oC, derate
linearly to zero at T_A = 175 ^oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175 ^oC.
NOTE 2: I_F = 0.5A, I_RM = 1A, I_R(REC) = 0.250A
Copyright © 2008
6-11-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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