1N5194UR Datasheet, PDF (1/1 Pages) Compensated Deuices Incorporated – GENERAL PURPOSE SILICON DIODES

LL-35 High Voltage / Current
Use Advantages
1N5194UR
thru
1N5196UR
Low Leakage Glass Diodes
Used in applications where the highest voltage and current performance of
small signal devices are required.
In instrument applications for voltage isolation, pulse clipping and glue logic.
Ideal for use in (Medical, Military and Aero/Space).
Features
Six Sigma quality
Humidity proof glass
Metallurgically bonded
Thermally matched system
No thermal fatigue
High surge capability
Sigma Bond™ plated contacts
100% guaranteed solderability
LL-35 MINI MELF
Package Type DO-213AA
0 .1 0 "R E F
2.54 mm REF
Length
0 .1 3 -0 .1 4 6 "
3.30-3.70 mm
Both End C aps
0 .0 1 6 -.0 2 2 "
0.41-0.55 mm
D ia.
.063-.067"
1.6-1.7m m
Absolute Maximum Ratings
Symbol
Value
Unit
Power Dissipation at T_AMB= 25 ^o C
Average Forward Rectified Current at T_AMB= 25 ^o C
Operating and Storage Temperature Range
Power derating at T = 25 oC
AMB
Detail Specifications
P_tot
I_AV
T_O&ST
P
dr
500
200
-55 to 200
3.0 (Max)
mW
mAmps
o_C
mW/^oC
Type
Peak
Inverse
Voltage
(MIN.)
@0.1 mA
Volts
Maximum
Maximum
Maximum Forward
Maximum
Reverse Average Rectified Current Voltage Reverse Leakage Current
Working Voltage _______________
Drop
_______________
(V_RMM)
(I_O)
25° C
(I_O)
150° C
@ I_F = 100mA
(V_F)
(I_R) @ V_RWM
25° C
150° C
Volts mAmps mAmps
Volt
nA
µA
1N5194
80
70
200
50
1.0
25
5
1N5195
200
180
200
50
1.0
25
5
1N5196
250
225
200
50
1.0
25
5
Note 1: One half cycle, 60 Hz. sine wave.
Maximum
Surge
Current
(I_FSM)
(NOTE 1)
Amps
2
2
2
6 Lake Street - Lawrence, MA 01841
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