1N5186_08 Datasheet, PDF (1/2 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5186 thru 1N5190
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 100 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast
and ultrafast device types in both through-hole and surface mount packages.
APPEARANCE
Package E
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5186 to 1N5190 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 100 to 600 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/424
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
• Fast recovery 3 Amp rectifiers 100 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65^oC to +175^oC
• Thermal Resistance: 20^oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 1.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 3.0 Amps @ T_A
= 25ºC and 0.700 Amps at T_A = 150ºC
• Forward Surge Current: 80 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 750 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING PEAK MINIMUM
REVERSE BREAKDOWN
VOLTAGE
VOLTAGE
TYPE
1N5186
1N5187
1N5188
1N5189
1N5190
V_RWM
VOLTS
100V
200V
400V
500V
600V
V_BR @ 50μA
VOLTS
120V
240V
480V
550V
660V
FORWARD
VOLTAGE
V_F
@ 9A (pulsed)
MIN
MAX
VOLTS
VOLTS
0.9V
1.5V
MAXIMUM
REVERSE
CURRENT
I_R @ V_RWM
25^oC
100^oC
µA
µA
2.0
100
MAXIMUM
REVERSE
RECOVERY
TIME
t_rr
ns
150
200
250
300
400
AVERAGE
RECTIFIED
CURRENT AMPS
I_O
25^oC
150^oC
AMPS AMPS
3.0
0.7
3.0
0.7
3.0
0.7
3.0
0.7
3.0
0.7
Copyright © 2008
6-11-2008 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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