1N4607 Datasheet, PDF (1/4 Pages) Microsemi Corporation – Silicon Switching Diode DO-35 Glass Package

Silicon Switching Diode_1N14N1465007
Applications
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
Maximum Ratings
Symbol
Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC
PIV
Average Rectified Current
Iavg
Continuous Forward Current
I_Fdc
Peak Surge Current (t_peak = 1 sec.)
I_peak
BKC Power Dissipation T_L=50 ^oC, L = 3/8" from body
P_tot
Operating Temperature Range
T_Op
Storage Temperature Range
T_St
Electrical Characteristics @ 25 ^oC*
Symbol Minimum
Forward Voltage Drop @ I_F = 400 mA
V_F
***
Value
85 (Min).
200
200
1.0
500
-65 to +200
-65 to +200
Maximum
1.10
Breakdown Voltage @ I_R = 25 µA
PIV
85
Unit
Volts
mAmps
mAmps
Amp
mWatts
o_C
o_C
Unit
Volts
Volts
Reverse Leakage Current @ V_R = 50 V I_R
Reverse Recovery time (note 1)
t_rr
100
µA
10
nSecs
Note 1: Per Method 4031-A with I_F = 10 mA,Vr = 6 V, R_L = 100 Ohms. * UNLESS OTHERWISE SPECIFIED
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