1N4500_10 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SWITCHING DIODE

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
SWITCHING DIODE
– METALLURGICALLY BONDED
– HERMETICALLY SEALED
– DOUBLE PLUG CONSTRUCTION
Qualified per MIL-PRF-19500/403
DEVICES
1N4500
QUALIFIED LEVELS
JAN
JANTX
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 1S:
Surge Current A, sine 1μS:
Leakage Current: 100nA
DC ELECTRICAL CHARACTERISTICS
-65°C to +175°C
-65°C to +200°C
0.5A
4A
75V, T_A = +25°C
V_F
I_R
V_BR
Ambient I_F Min Max Ambient V_R Min Max Ambient I_R Min Max
(°C) mA V V (°C) V(dc) μA nA (°C) μA V V
25 .250 0.47 0.56 25
75
-- 100
25
100 80 --
25
1 0.52 0.60
25
10 0.64 0.72
25
20 0.67 0.77
25 300 -- 1.10
NOTE: (1) Derate 2.0mAdc/°C for TA > =25°C
AC ELECTRICAL CHARACTERISTICS AT 25°C
Capacitance @ 0V
I_F = I_R = 10mA
R_L = 100 ohms
Min Max Unit
--
4.0
pF
--
6.0
ns
DO-35
LDS-0154 Rev. 1 (100198)
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