1N4454 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

Silicon Switching Diode 1N4454,
Applications
1N4454-1
DO-35 Glass Package
Used in general purpose applications,
where performance and switching
speed are important.
DO-35 Glass Package
Features
Six sigma quality
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
LL-34/35 MELF SMD available
Full approval to Mil-S-19500 /144
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC
PIV
75 (Min.)
Volts
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t_peak = 1 sec.)
Power Dissipation T_L= 50 ^oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25 ^oC*
I_Avg
I_Fdc
I_peak
P_tot
T_Op
T_St
Symbol
200
300
1.0
500
200
-65 to +200
Limits
mAmps
mAmps
Amp
mWatts
o_C
o_C
Unit
Forward Voltage @ I_F= 10 mA
V_F
Breakdown Voltage @ I_R = 5 µA
PIV
Reverse Leakage Current @ V_R = 50 V
I_R
Reverse Leakage Current @ V_R = 50 V, T=150 ^o C
I_R
Capacitance @ V_R = 0 V, f = 1mHz
C_T
Reverse Recovery Time (note 1)/(note 2)
t_rr
Forward Recovery Voltage (note 3)
V_fr
1.0(max)
75 (min)
0.1 (max)
100 (max)
2.0 (max)
2.0/4.0 (max)
3.0 (max)
Volts
Volts
µA
µA
pF
nSecs
Volts
Note 1: Per Method 4031-A with I = I = 10 mA, R = 100 Ohms, C = 3 Pf.
FR
L
Note 2: Per Method 4031-A with I = 10 mA, R = 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
F
L
Note 3: Per Method 4026 with I = 100 mA, R = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-
F
L
tition Rate = 5 - 100 KHz.
* Unless Otherwise Specified
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