1N4153 Datasheet, PDF (1/1 Pages) Compensated Deuices Incorporated – SWITCHING DIODES

Silicon Switching Diode ₁¹_N^N₄⁴₁¹₅⁵₀^3, DO-35 Glass Package
Applications
1N4153-1
Used in general purpose applications,where a low current controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Full approval to Mil-S-19500/337
Available up to JANTXV-1 levels
"S" level screening available to SCDs
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
Maximum Ratings
Symbol
Value
Peak Inverse Voltage
PIV
75 (Min.)
Average Rectified Current
I_Avg
Continuous Forward Current
I_Fdc
Peak Surge Current (t_peak = 1 Sec.)
I_peak
BKC Power Dissipation T_L = 50 ^oC, L = 3/8" from body
P_tot
Operating and Storage Temperature Range
T_{Op & St}
Electrical Characteristics @ 25 ^oC*
Symbol Minimum
150
300
0.25
500
-65 to +200
Maximum
Forward Voltage
@ I_F = 100 µA V_F
Vf
Forward Voltage
@ I_F = 250 µA V_F
Vf
Forward Voltage
@ I_F = 1.0 mA V_F
Vf
Forward Voltage
@ I_F = 2.0 mA V_F
Vf
Forward Voltage
@ I_F = 10 mA
V_F
Forward Voltage
@ I_F = 20 mA
V_F
Reverse Leakage Current @ V_R = 50 V I_R
Breakdown Voltage @ I_R = 5.0 µA
PIV
Capacitance @ V = 0 V, f = 1mHz
C
R
T
Reverse Recovery Time (note 1)
t_rr
Reverse Recovery Time (note 2)
t_rr
0.49
0.53
0.59
0.62
0.70
0.74
75
0.55
0.59
0.67
0.70
0.81
0.88
0.05(50 @ 150 ^oC)
2.0
4.0
2.0
Unit
Volts
mAmps
mAmps
Amp
mWatts
o_C
Unit
Volts
Volts
Volts
Volts
Volts
Volts
µA
Volts
pF
nSecs
nSec
Note 1: Per Method 4031-A with I_F = I_R = 10 mA, R_L = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified
Note2: Per Method 4031-A with I_F = I_R = 10 mA, Rr = 6 Volts, Rl=100 ohms.
6 Lake Street - Lawrence, MA 01841