1N4151-1 Datasheet, PDF (1/1 Pages) Microsemi Corporation – Switching Diode

ESA QUALIFIED
1N4151-1
Switching Diode
FEATURES
• Qualified to ESA/SCC 5101/025
• Metallurgical Bond
• DO-35 Package
• Hermetically Sealed Glass Package
1.53/ 2.28
12.7min
MAXIMUM RATINGS
Operating Temperature: -55^oC to +200^oC
Storage Temperature:
-65^oC to +200^oC
Thermal Impedance:
25^oC/W max. (See Note 3)
Thermal Resistance:
250^oC/W max.
3.05 min
5.08 max
Total Power Dissipation: 500mW
DC Reverse Voltage:
50V
Breakdown Voltage:
75V nom.
0.458 min
0.558 max
Dimensions in Millimetres
ELECTRICAL CHARACTERISTICS at 25oC unless otherwise specified.
I_R
@ 50V dc
nA
min max
50
V_BR
@ 5uA
V
min max
75
V_F
@ 50mA
V
min max
1.0
I_R
@ 50V dc,
T_A = 150^oC
uA
min max
50
Capacitance
(Note 2)
pF
min max
2.0
t_RR
(Note 1)
nsec
min max
4
NOTE 1:
NOTE 2:
NOTE 3:
I_F = - I_RM =10 - 200mA, i_RR = 1/10 I_F, R_L = 100Ω
V_R = 0V, f = 1MHz.
Thermal Impedance Conditions as follows:
I_H = 300mA, I_M = 1mA, t_H = 10mS, t_MD = 70uS
MECHANICAL
CHARACTERISTICS
CASE: Hermetically Sealed
Glass Package.
LEAD MATERIAL: Cu clad steel
LEAD FINISH: L4 (solder dipped)
MARKING: Alpha numeric.
POLARITY: Cathode Band.
Datasheet: MSC0314A
Industrial Estate, Gort Road, Ennis, Co. Clare, Ireland.
• Tel : 353 - 65 - 40044
• Fax : 353 - 65 - 22298
• Email [e-mail]