1N4150UR-1 Datasheet, PDF (1/1 Pages) Microsemi Corporation – MINI-MELF-SMD Silicon Diode

1N4150UR-1
FEATURES
• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/231
• SWITCHING DIODE
• METALLURGICALLY BONDED
• HERMETICALLY SEALED
• DOUBLE PLUG CONSTRUCTION
• ALSO AVAILABLE AS LL4150, CDLL4150, & MLL4150
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 1uS:
Surge Current B, sine 1S:
Total Power Dissipation:
Operating Current:
Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C
-65°C to +175°C
4.0A
0.5A
500mW
200mA, T_A= +25°C to +110°C
3.1mA/°C above T_EC= +110°C
50V
DC ELECTRICAL CHARACTERISTICS
V_F
I_R
Ambient I_F
(°C)
mA
Min Max Ambient
Min Max Ambient
V V (°C) V (dc) µA µA (°C)
25
1 .54 .62 25 50 - 0.1 25
25 10 .66 .74 150 50 - 100
25 50 .76 .86
25 100 .82 .92
25 200 .87 1.00
V_BR
I_R Min Max
µA V V
10 75 -
DESIGN DATA
Case: Hermetically sealed glass package per MIL-
PRF-19500/231 DO-213AA outline
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Thermal Resistance (R_θJEC): 100°C/W maximum
Thermal Impedance (Z_θJX): 70°C/W maximum
Polarity: Cathode end is banded.
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ 0V
pF
-
2.5
T_RR @ I_F =I_R=10mA,
I_Rec = 1mA.
nsec
-
4
V_FR @ I_F= 200mA
V
-
5
T_FR @ I_F = 200mA
nsec
-
10
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