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1N3611_04 Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS
SCOTTSDALE DIVISION
1N3611 thru 1N3614, 1N3957
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/228 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF
package configurations are available by adding a “US” suffix (see separate data
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
“A” Package
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N3611 thru 1N3614 and
1N3597 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/286 (for JANS, see 1N5614-5622 series)
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (also
see 1N5614US thru 1N5622US)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Average Rectified Forward Current (IO): 1.0 Amps @
TA = 100ºC and 0.30 Amps at 150ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING MINIMUM
AVERAGE
MAXIMUM
PEAK BREAKDOWN
RECTIFIED
FORWARD
TYPE
REVERSE
VOLTAGE
VRWM
VOLTAGE
VBR @ 100µA
CURRENT
(NOTE 2)
IO
VOLTAGE
VF @ 1 A
(PULSED)
VOLTS
VOLTS
AMPS
100oC
150oC
VOLTS
JAN1N3611 200
240
1.0
0.30
1.1
JAN1N3612 400
480
1.0
0.30
1.1
JAN1N3613 600
720
1.0
0.30
1.1
JAN1N3614 800
920
1.0
0.30
1.1
JAN1N3957 1000
1150
1.0
0.30
1.1
NOTE 1: TA = 25oC, IO = 1.0 A, 10 surges of 8.3 ms @ 1 minute intervals
NOTE 2: Linearly derate at 13.3 mA/ºC between TA=100ºC and 175ºC
MAXIMUM REVERSE
CURRENT
IR @ VRWM
µA
25oC
150oC
1.0
300
1.0
300
1.0
300
1.0
300
1.0
300
MAXIMUM
SURGE
CURRENT
(NOTE1)
IFSM
AMPS
30
30
30
30
30
Copyright  2004
12-08 2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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