1N3289_10 Datasheet, PDF (1/3 Pages) Microsemi Corporation – HIGH RELIABILITY SILICON POWER RECTIFIER

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/246
• Glass Passivated Die • Glass to Metal Header Construction
• VRRM to 1000V • 1600 Amps Surge Rating
DEVICES
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
Average Forward Current, T_C = 134°
Peak Surge Forward Current @ t_p = 8.3ms, half sinewave,
T_C = 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
V_RWM
I_F
I_FSM
R_θJC
T_j
T_STG
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Value
200
400
600
800
1000
100
1600
0.4
-65°C to 200°C
-65°C to 200°C
Parameters / Test Conditions
Forward Voltage
I_FM = 310A, T_C = 25°C *
Reverse Current
V_RM = 200, T_C = 25°C
V_RM = 400, T_C = 25°C
V_RM = 600, T_C = 25°C
V_RM = 800, T_C = 25°C
V_RM = 1000, T_C= 25°C
Reverse Current
V_RM = 200, T_C = 200°C
V_RM = 400, T_C = 200°C
V_RM = 600, T_C = 200°C
V_RM = 800, T_C = 200°C
V_RM = 1000, T_C = 200°C
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289
1N3291
1N3293
1N3294
1N3295
* Pulse test: Pulse width 300μsec. Duty cycle 2%
Note:
Symbol
V_FM
1N3289R
1N3291R
1N3293R
I_RM
1N3294R
1N3295R
1N3289R
1N3291R
1N3293R
I_RM
1N3294R
1N3295R
Min.
Max.
1.55
10
30
Unit
V
A
A
°C/W
°C
°C
Unit
V
mA
mA
DO-205AA (DO-8)
T4-LDS-0142 Rev. 1 (091785)
Page 1 of 3