1N3164_10 Datasheet, PDF (1/3 Pages) Microsemi Corporation – HIGH RELIABILITY SILICON POWER RECTIFIER

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/211
• Glass Passivated Die • Glass to Metal Header Construction
• Rugged Construction • High Surge Current Capability
DEVICES
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
Average Forward Current, T_C = 150°
Average Forward Current, T_C = 120°
Peak Surge Forward Current @ t_p = 8.3ms, half sinewave,
T_C = 200°C
Thermal Resistance, Junction to Case
Typical Thermal Resistance
Operating Case Temperature Range
Storage Temperature Range
Symbol
V_RWM
I_F
I_F
I_FSM
R_θJC
R_θCS
T_j
T_STG
Value
200
400
600
800
1000
200
300
6250
0.20
0.80
-65°C to 200°C
-65°C to 200°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I_FM = 940A, T_C = 25°C
Reverse Current
V_RM = 200, T_C = 25°C
V_RM = 400, T_C = 25°C
V_RM = 600, T_C = 25°C
V_RM = 800, T_C = 25°C
V_RM = 1000, T_C = 25°C
Reverse Current
V_RM = 200, T_C = 175°C
V_RM = 400, T_C = 175°C
V_RM = 600, T_C = 175°C
V_RM = 800, T_C = 175°C
V_RM = 1000, T_C = 175°C
Note:
Symbol
V_FM
Min.
1N3164 1N3164R
1N3168 1N3168R
1N3170 1N3170R
I_RM
1N3172 1N3172R
1N3174 1N3174R
1N3164 1N3164R
1N3168 1N3168R
1N3170 1N3170R
I_RM
1N3172 1N3172R
1N3174 1N3174R
Max.
1.55
10
30
Unit
V
A
A
A
°C/W
°C/W
°C
°C
Unit
V
mA
mA
DO-205AB (DO-9)
T4-LDS-0140 Rev. 1 (091750)
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