1N1184_10 Datasheet, PDF (1/3 Pages) Microsemi Corporation – HIGH RELIABILITY SILICON POWER RECTIFIER

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/297
• Glass Passivated Die
• Glass to Metal Seal Construction
• 500 Amps Surge Rating • VRRM to 1000 Volts
DEVICES
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Reverse Voltage
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
Average Forward Current, T_C = 150°
Peak Surge Forward Current @ t_p = 8.3ms, half sinewave,
T_C = 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
V_R
I_F
I_FSM
R_θJC
T_j
T_STG
Value
100
200
400
600
800
1000
35
500
0.8
-65°C to 175°C
-65°C to 175°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I_FM = 110A, T_C = 25°C*
Forward Voltage
I_FM = 500A, T_C = 150°C*
Reverse Current
V_RM = 100, T_j = 25°C
V_RM = 200, T_j = 25°C
V_RM = 400, T_j = 25°C
V_RM = 600, T_j = 25°C
V_RM = 800, T_j = 25°C
V_RM = 1000, T_j = 25°C
Reverse Current
V_RM = 100, T_j = 150°C
V_RM = 200, T_j = 150°C
V_RM = 400, T_j = 150°C
V_RM = 600, T_j = 150°C
V_RM = 800, T_j = 150°C
V_RM = 1000, T_j = 150°C
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Symbol
V_FM
V_FM
1N1184R
1N1186R
1N1188R
1N1190R
I_RM
1N3766R
1N3768R
1N1184R
1N1186R
1N1188R
1N1190R
I_RM
1N3766R
1N3768R
Min.
Max.
1.4
2.3
10
1
Note:
Unit
V
A
A
°C/W
°C
°C
Unit
V
V
μA
mA
DO-203AB (DO-5)
T4-LDS-0138 Rev. 1 (091729)
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