16M0 Datasheet, PDF (1/1 Pages) Microsemi Corporation – 60V 300mA MONOLITHIC DIODE ARRAY

A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
16M0
Phone: [phone]
Fax: [phone]
DIE SPECIFICATION
60V 300mA
MONOLITHIC DIODE ARRAY
FEATURES:
• 16 DIODE CORE DRIVER
• trr < 20 ns
• RUGGED AIR-ISOLATED CONSTRUCTION
• LOW REVERSE LEAKAGE CURRENT
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
.054"
J
J
J
J
A
C
.060"
A
VBR(R) *1 *2 Reverse Breakdown Voltage
IO
*1 Continuous Forward Current
IFSM
Top
Tstg
*1 Peak Surge Current (tp= 1/120 s)
Operating Junction Temperature Range
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
60 Vdc
300 mAdc
500 mAdc
-65 to +150 °C
-65 to +200 °C
J
J
J
J
Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified
Symbol Parameter
Conditions
Min Max Unit
BV1 Breakdown Voltage
IR = 10uAdc
60
Vf1 Forward Voltage
IF = 100mAdc *1
1 Vdc
Vf2 Forward Voltage
IF = 500mAdc *1
1.5 Vdc
IR1 Reverse Current
VR = 40 Vdc
0.1 uAdc
Ct
Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz
8.0 pF
tfr
Forward Recovery Time IF = 500mAdc
40 ns
trr
Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms
20 ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top
/ Au Backside (No Dash #)
ORDERING INFORMATION
PART #: 16M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.
MSC1024.PDF Rev - 12/3/98