1214-300V Datasheet, PDF (1/4 Pages) Microsemi Corporation – 300 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz

1214-300V R1
1214-300V
300 Watts - 50 Volts, 330µs, 10%
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-300V is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at three hundred thirty
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metallization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
420 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
75 Volts
3.0 Volts
20 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55ST, STYLE 1
RF ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pg
ηc
Rl
Droop
Flatness
VSWR-S
VSWR-T
Power Out
Power Gain
Collector Efficiency
Input Return loss
Droop
Flatness
Load Mismatch Stability
Load Mismatch Tolerance
Freq = 1200 – 1400 MHz
Vcc = 50 Volts
Pin = 40 Watts
Pulse Width = 330 µS
Duty Factor = 10%
Note: test @ 1.2, 1.3, and 1.4 GHz.
FUNCTIONAL CHARACTERISTICS @ 25°C
MIN
300
8.75
50
10
TYP MAX UNITS
410 Watts
dB
55
%
dB
0.5
dB
1. 0
dB
1.5:1
2.5:1
Bvces
Ices
θjc¹
Collector to Emitter Breakdown Ic = 100 mA
75
Collector to Emitter Leakage
Vce = 50 Volts
Thermal Resistance
Rated Pulse Condition
Volts
10
mA
0.29 ^oC/W
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax [phone]