1214-110M Datasheet, PDF (1/4 Pages) Microsemi Corporation – 110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz

1214-110M
110 Watts - 50 Volts, 330µs, 10%
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-110M is an internally matched, COMMON BASE transistor capable
of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10%
duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed
transistor is specifically designed for L-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
270 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
75 Volts
3.0 Volts
8 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200^oC
+ 200^oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pg
ηc
Rl
Droop
Flatness
VSWR¹
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Droop
Flatness
Load Mismatch Tolerance
Load Mismatch - Stability
Freq = 1200 – 1400 MHz
Vcc = 50 Volts
Pin = 20 Watts
Pulse Width = 330µs
Duty Factor = 10%
FUNCTIONAL CHARACTERISTICS @ 25°C
Bvces
Ices
θjc¹
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 100 mA
Vce = 50 Volts
Rated Pulse Condition
MIN TYP MAX UNITS
110
170 Watts
7.4
dB
50 55
%
10
dB
0.5 dB
1.25 dB
3:1
1.5:1
75
Volts
10
mA
0.65 ^oC/W
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax [phone]
2008 - Rev. 1