10502_10 Datasheet, PDF (1/4 Pages) Microsemi Corporation – 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz

10502
500 Watts, 50 Volts, Pulsed
Avionics 1030 / 1090 MHz
GENERAL DESCRIPTION
The 10502 is a high power COMMON BASE bipolar transistor. It is designed
for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
and duty required for MODE-S &TCAS applications. The device has gold thin-
film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25^oC¹
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1458 Watts
65 Volts
3.5 Volts
40 Amps
- 65 to + 200^oC
+ 230^oC
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
P_OUT
P_IN
P_G
η_c
RL
VSWR
Output Power
Input Power
Power Gain
Collector Efficiency
Return Loss
Load Mismatch Tolerance¹
TEST CONDITIONS
F = 1030/1090 MHz
V_CC = 50 Volts
PW = 32 μsec, DF = 2%
F = 1090 MHz
MIN TYP MAX UNITS
500
W
70
W
8.5
dB
40
%
10
dB
10:1
BV_EBO
BV_CES
I_CBO
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Leakage
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 60 mA
V_CB = 36V
Ic = 5 A, Vce = 5 V
Note 1: At rated output power and pulse conditions
3.5
Volts
65
Volts
25
mA
20
0.12 ^oC/W
Rev. C: August 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.