1011LD110B Datasheet, PDF (1/5 Pages) Microsemi Corporation – 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

1011LD110B
110 Watts, 32 Volts
Pulsed Avionics 1030 to 1090 MHz
LDMOS FET
GENERAL DESCRIPTION
The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral
MOSFET capable of providing 110W_pk of RF power from 1030MHz to 1090 MHz.
The device is nitride passivated and utilizes gold metallization to ensure highest
MTTF. The transistor includes input and output prematch for broadband capability.
Low thermal resistance package reduces junction temperature, extends life.
Integrated ESD protection makes the device robust.
CASE OUTLINE
55QT
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS, V_DS=0)
Temperatures
Storage Temperature
Operating Case Temperature¹
+65V
+20V
-65 to +150°C
+100°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
BV_DSS
I_DSSF
I_GSSF
V_GS(TH)
V_DS(ON)
g_FS
θ_JC1
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Thermal Resistance
V_GS = 0V, I_D = 2mA
V_DS = 32V, V_GS = 0V
V_GS = 10V, V_DS = 0V
V_DS = 10V, I_D = 3mA
V_GS = 10V, I_D = 1A
V_DS = 10V, I_D = 1A
MIN TYP MAX UNITS
65
V
5
µA
2
µA
2
4
V
0.25
V
2.2
S
0.12 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, I_DQ = 250mA
G_PS
Common Source Power Gain Pulse width = 32µs, LTDC=2%, 13.5 14.5
dB
Pd
Pulse Droop
F=1030/1090 MHz, P_out = 110W
0.5
dB
P_1dB
Output Power at 1dB Gain
Compression
Pulse width = 32µs, LTDC=2%,
F=1030/1090 MHz
110
W
η_D
Drain Efficiency
F = 1030 MHz, P_out = 110W
ψ
Load Mismatch
F = 1090 MHz, P_out = 110W
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format 1: 32µs, 2% Long Term Duty Factor
3. Pulsed Bias: IDQ-PULSED = 6.5mA (@ 42us ON, 1.6msec)
Rev. 0 – Apr. 2007
45 50
%
5:1
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