1002MP_10 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 2 Watts, 35 Volts Pulsed Avionics at 960-1215 MHz

1002MP
2 Watts, 35 Volts
Pulsed Avionics at 960-1215 MHz
GENERAL DESCRIPTION
The 1002MP is a COMMON BASE transistor capable of providing 2 Watts of
pulsed RF output power in the band 960 to 1215 MHz. This transistor is
specifically designed for pulsed Avionics amplifier applications. It utilizes gold
metallization and low thermal resistance packaging to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
7W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
50 V
3.5 V
250 mA
Storage Temperature
-40 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_in
P_g
η_c
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1150 MHz
V_cc = 35 Volts
Pulse width = 20 µs
LTDF = 1%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
C_ob
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 5 mA
Vce = 5V, Ic = 100 mA
Vcb=35V, f=1MHz
MIN
2.0
8.24
TYP
4
11
45
MAX
0.3
10:1
UNITS
W
W
dB
%
3.5
V
50
V
20
2.2 5.0
pF
25 °C/W
Rev B: August 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.