1000MP Datasheet, PDF (1/3 Pages) Advanced Power Technology – 0.6 Watts, 18 Volts, Class A Linear to 1150 MHz

1000MP
0.6 Watts, 18 Volts
1150 MHz
GENERAL DESCRIPTION
The 1000MP is a COMMON EMITTER transistor capable of providing 0.6
Watt of Class A, RF output power to 1150 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold metalization
and diffused ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55FW
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
5.3 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
45 V
3.5 V
300 mA
Storage Temperature
-40 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_in
P_g
F_t
VSWR
Power Output
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1150 MHz
V_cc = 18 Volts
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_cbo
Ices
Emitter to Base Breakdown
Collector to Base Breakdown
Collector to Emitter Leakage
h_FE
DC – Current Gain
C_ob
Capacitance
θjc¹
Thermal Resistance
Note 1: At rated output power
Ie = 1 mA
Ic = 1 mA
Vce=28V
Vce = 5V, Ic = 100 mA
Vcb = 28V, f =1 MHz
Rev A: Updated June 2009
MIN
0.6
10.8
TYP
3.7
MAX
0.05
10:1
UNITS
W
W
dB
GHz
3.5
V
40
V
1
mA
15
2.0 3.0
pF
33 °C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.