0912LD20 Datasheet, PDF (1/5 Pages) Microsemi Corporation – 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET

0912LD20
20 Watts, 28 Volts
Pulsed Avionics 960 to 1215 MHz
LDMOS FET
GENERAL DESCRIPTION
The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral
MOSFET capable of providing 20W_pk of RF power from 960 to 1215 MHz.
The device is nitride passivated and utilizes gold metallization to ensure highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55QT
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS, V_DS=0)
Temperatures
Storage Temperature
Operating Case Temperature
60 W
35V
20V
-40 to +150°C
+100°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
BV_dss
I_dss
I_gss
V_gs(th)
V_ds(on)
g_FS
θ_JC1
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Thermal Resistance
V_gs = 0V, I_d = 1mA
V_ds = 28V, V_gs= 0V
V_gs = 10V, V_ds = 0V
V_ds = 10V, I_d = 3mA
V_gs = 10V, I_d = 250mA
V_ds = 10V, I_d = 125mA
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 28V, I_dq = 80mA
G_PS
Pd
η_d
ψ
NOTES:
Common Source Power Gain Pulse width = 32µs, LTDC=2%
Pulse Droop
Drain Efficiency
Load Mismatch
F=960/1215 MHz, P_out = 20W
F = 960 MHz, P_out = 20W
F = 1090 MHz, P_out = 20W
1. At rated output power and pulse conditions
2. Pulse Format 1: 32µs, 2% Long Term Duty Factor
Rev. A - May 2008
MIN TYP MAX UNITS
65
V
50
µA
1
µA
3
5
V
0.23 V
590
mA/V
0.3
ºC/W
14 15
dB
0.5 dB
40 42
%
5:1
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