04M0 Datasheet, PDF (1/1 Pages) Microsemi Corporation – 100V 300mA MONOLITHIC DIODE ARRAY

A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
DIE SPECIFICATION
04M0
Phone: [phone]
Fax: [phone]
100V 300mA
MONOLITHIC DIODE ARRAY
5
FEATURES:
• INDIVIDUAL DIODES EQUIVALENT TO 1N4148
• Vf MATCH TO 5 mV at 10 mA
• ULTRA-HIGH SPEED SWITCHING
• QUAD ISOLATED DIODES
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
.049"
C
C
C
C
A
A
A
A
.023"
VBR(R) *1 *2 Reverse Breakdown Voltage
IO
*1 Continuous Forward Current
IFSM
*1 Peak Surge Current (tp= 1/120 s)
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
100 Vdc
300 mAdc
500 mAdc
-65 to +150 °C
-65 to +200 °C
Electrical Characteristics (Per Diode) @ 25°C unless otherwise
specified
Symbol Parameter
Conditions
Min Max Unit
BV1
Breakdown Voltage
IR = 100uAdc
BV2
Breakdown Voltage
IR = 5uAdc
Vf1
Forward Voltage
IF = 100mAdc *1
IR1
Reverse Current
VR = 40 Vdc
IR2
Reverse Current
VR = 20 Vdc
Ct
Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz
tfr
Forward Recovery Time IF = 100mAdc
trr
Reverse Recovery Time IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
VF5
Forward Voltage Match IF = 10 mA
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
100
75
1 Vdc
0.1 uAdc
25 nAdc
4.0 pF
15 ns
5 ns
5 mV
Packaging Options:
W: Wafer (100% probed)
(sample probed)
D: Chip (Waffle Pack)
Metallization Options:
U: Wafer
B: Chip (Vial)
Standard: Al Top
(No Dash #)
/ Au Backside
Processing Options:
Standard: Capable of JANTXV application
(No Suffix)
Suffix C: Commercial
ORDERING INFORMATION
PART #: 04M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1023.PDF Rev - 11/25/98