0405SC-2200M Datasheet, PDF (1/5 Pages) Microsemi Corporation – 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-2200M Rev A1
0405SC-2200M
2200Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE
Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from
406 to 450 MHz. The transistor is designed for use in High Power Amplifiers
supporting applications such as UHF Weather Radar and Long Range Tracking
Radar. The device is an addition to the series of High Power Silicon
Carbide Transistors from Microsemi RF IS.
CASE OUTLINE
55TW-FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
I_dss
Drain-Source Leakage Current V_GS = -20V, V_DG= 125V
I_gss
Gate-Source Leakage Current V_GS = -20V, V_DS = 0V
θ_JC1
Thermal Resistance
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I_dq(ave) = 120 mA, Freq = 406, 425, 450 MHz,
G_PG
Common Gate Power Gain
P_out = 2200 W, Pulsed
7.0 7.5
dB
P_in
Input Power
Pulse Width = 300us, DF = 6%
390 440 W
η_d
Drain Efficiency
F = 450 MHz, P_out =2200W
50 55
%
ψ
Load Mismatch
F = 420 MHz, P_out = 2200W
10:1
Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 490 W
2450
W
Vgs
Gate source Voltage
Set for Idq(ave) = 120mA
3.0
10.0 Volts
Rev A1
May 2010
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
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