0405SC-1500M Datasheet, PDF (1/5 Pages) Microsemi Corporation – 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-1500M Rev B
0405SC-1500M
1500Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE
Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406
to 450 MHz. The transistor is designed for use in High Power Amplifiers
supporting applications such as UHF Weather Radar and Long Range Tracking
Radar. The device is an addition to a series of High Power Silicon Carbide
Transistors from Microsemi PPG.
CASE OUTLINE
55ST FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
I_dss
I_gss
θ_JC1
CHARACTERISTICS
Drain-Source Leakage Current
Gate-Source Leakage Current
Thermal Resistance
TEST CONDITIONS
V_GS = -20V, V_DG= 125V
V_GS = -20V, V_DS = 0V
MIN
TYP
MAX
750
50
0.15
UNITS
µA
µA
ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I_dq(ave) = 125 mA, Freq = 406, 425, 450 MHz,
G_PG
Common Gate Power Gain
P_out = 1500 W, Pulsed
7.5 8.0
dB
P_in
Input Power
Pulse Width = 300us, DF = 6%
250 270 W
η_d
Drain Efficiency
F = 450 MHz, P_out =1500W
50 55
%
ψ
Load Mismatch
F = 420 MHz, P_out = 1500W
5:1
Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 255 W
1600
W
Vgs
Gate source Voltage
Set for Idq(ave) = 125mA
3.0
10.0 Volts
Note 1: Thermal Resistance rating is with operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics
Note 2: Product Available May 2010
Rev B – Mar 2010
Microsemi RFIS SC. reserves the right to change, without notice, the specifications and information contained herein.
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