0405SC-1000M_10 Datasheet, PDF (1/4 Pages) Microsemi Corporation – 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-1000M Rev F
0405SC-1000M
1000Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is
designed for use in High Power Amplifiers supporting applications such as UHF
Weather Radar and Long Range Tracking Radar. The device is an addition to
a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE
55ST FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
I_dss
Drain-Source Leakage Current V_GS = -20V, V_DG= 125V
I_gss
Gate-Source Leakage Current V_GS = -20V, V_DS = 0V
θ_JC1
Thermal Resistance
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I_dq(ave) = 250 mA, Freq = 406, 425, 450 MHz,
G_PG
Common Gate Power Gain
P_out = 1000 W, Pulsed
8 8.5
dB
P_in
Input Power
Pulse Width = 300us, DF = 10%
140 155 W
η_d
Drain Efficiency
F = 450 MHz, P_out =1000W
50
%
ψ
Load Mismatch
F = 406 MHz, P_out = 1000W
10:1
Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 180 W
1100
W
Vgs
Gate source Voltage
Set for Idq(ave) = 150mA
3.0
10.0 Volts
Rev F May 2010
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
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