0150SC-1250M Datasheet, PDF (1/5 Pages) Microsemi Corporation – 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT

0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB
150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of
providing 1250 Watts minimum of RF power from 150 to 160 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications
such as VHF Weather Radar and Long Range Tracking Radar. The device is
the first in a series of High Power Silicon Carbide Transistors from
Microsemi PPG.
CASE OUTLINE
55KT FET
(Common Gate)
See outline drawing
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V_DSS)
Gate-Source (V_GS)
Drain Current (Idg)
Temperatures
Storage Temperature
Operating Junction Temperature
250 V
- 1V
35A
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
I_dss1
Drain-Source Leakage Current V_GS = -15V, V_DG = 95V
I_gss
Gate-Source Leakage Current V_GS = -20V, V_DS = 0V
θ_JC1
Thermal Resistance
Pout=1250W
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I_dq(avg) = 500 mA, Freq = 155 MHz,
G_PG
P_in
η_d
ψ
Po +1dB
Common Gate Power Gain
Input Power
Drain Efficiency
Load Mismatch
Power Output – Higher Drive
P_out = 1250 W, Pulsed
Pulse Width = 300us, DF = 10%
F = 155 MHz, P_out =1250W
F = 155 MHz, P_out = 1250W
F = 155 MHz, Pin = 190 W
9.0 9.5
150 160
60
10:1
1400
Vsg
Source-Gate Voltage
Set for Idq(avg) = 500 mA
3.0
10.0
dB
W
%
W
Volts
Dec 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our
web site at www.microsemi..com or contact our factory direct.