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61059 Datasheet, PDF (2/3 Pages) Micropac Industries – Suitable for high-density PC Board mounting
61059
11/07/03
0.060” COAXIAL SILICON PHOTOTRANSISTOR
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL MIN TYP MAX
Light Current
-X01
0.5
3.0
-X02
2.0
5.0
-X03
IL
4.0
8.0
-X04
7.0
-
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
-X01
ID
BVCEO
BVECO
25
50
7
2.0
-X02
-X03
tr
3.0
5.0
-X04
7.0
Saturation Voltage
Angular Response
VCE (sat)
θ
0.5
22
NOTES:
1. Irradiance in mW/cm2 from a tungsten source at a color temperature of 2870K.
2. The angle between incidence for peak response and incidence for 50% of peak response.
UNITS
mA
nA
V
V
µsec
V
degrees
TEST CONDITIONS
VCE = 5.0 V, H = 20 mW/cm2
VCE = 30 V, H = 0
IC = 100 µA, H = 0
IE = 100 µA, H = 0
RL = 1 KΩ, VCC = 5.0 V,
IL = 1.0 Ma
IC = 0.4 mA, H = 20 mW/cm2
RL = 1KΩ, VCC = 5V,
IL = 1.0mA
NOTE
1
1
2
Vcc PULSE RESPONCE TEST
CIRCUIT AND WAVEFORM
90%
OUTPUT
DUT
10%
tR
tF
IL
RL OUTPUT
TYPICAL CHARACTERISTICS
NORMALIZED LIGHT CURRENT
vs.
ANGULAR DISPLACEMENT
1.25
1.00
0.75
0.50
0.25
0.00
-40 -30 -20 -10 0 10 20 30 40
Θ - ANGULAR DISPLACEMENT [DEGREES]
RELATIVE SPECTRAL RESPONSE
100
90
80
70
60
50
40
30
20
10
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
λ - WAVELENGTH [µm]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM