66083 Datasheet, PDF (1/2 Pages) Micropac Industries – High gain, high voltage transistor

66083
SINGLE CHANNEL OPTOCOUPLERS
REVISION A 12/29/00
Features:
• Collector is electrically isolated from the case.
• Overall current gain...1.5 typical (-X03)
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
The 66083 series optocoupler consist of a Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon
phototransistor packaged in a hermetically sealed LCC case. The 66083 can be tested to customer specifications, as well as
to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................±1kV
Emitter-Collector Voltage..............................................................................................................................................................5V
Collector-Emitter Voltage............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA
Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) .................................................................................1A
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
* JEDEC registered data
Package Dimensions
Schematic Diagram
PIN 1
IDENTIFIER
0.225 [5.72]
0.215 [5.46]
0.155 [1.40]
0.145 [3.68]
0.075 [1.91]
0.061 [1.55]
3A
C1
1
0.048 [1.22]
2 ^0.032[0.81]
3 PL
0.028 [0.17]
0.022 [0.56]
4
3 _0.055[1.40]
0.045 [1.14]
0.088 [2.24]
0.072 [1.83]
E4
K
2
ALL DIMENSIONS ARE ININCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]
www.micropac.com E-MAIL: [e-mail]
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