4N47BU Datasheet, PDF (1/2 Pages) Micropac Industries – Base lead provided for conventional transistor biasing

4N47BU
4N48BU
4N49BU
08/05/2014
JAN, JANTX, JANTXV, AND JANS OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
 Certified to MIL-PRF-19500/548
 High reliability
 Base lead provided for conventional transistor
biasing
 High blocking voltage transistor
 Hermetically sealed for reliability and stability
 Stability over wide temperature range
 High voltage electrical isolation
Applications:
 Line Receivers
 Switchmode Power Supplies
 Signal ground isolation
 Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed 6-pin leadless chip carrier. The 4N47BU, 4N48BU and 4N49BU optocouplers can be supplied to
customer specifications as well as JAN, JANTX, JANTXV, and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage ......................................................................................................................................................... 1 kV
Collector-Base Voltage .......................................................................................................................................................... 60 V
Collector-Emitter Voltage ...................................................................................................................................................... 60 V
Emitter-Base Voltage ............................................................................................................................................................... 7 V
Input Diode Reverse Voltage................................................................................................................................................... 2 V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (see note 1) ................................... 40 mA
Continuous Collector Current ............................................................................................................................................. 50 mA
Peak Diode Current (Value Applies for t_W  1 s, PRR  300pps) ....................................................................................... 1 A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ...............................300 mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature..........................................................................................................................................-65°C to +125°C
Lead Temperature (10 seconds maximum) ....................................................................................................................... 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.40 mA/°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
* JEDEC registered data
Package Dimensions
Schematic Diagram
PIN 1
IDENTIFIER
0.250 [6.35]
0.240 [6.10]
0.175 [4.45]
0.165 [4.19]
0.080 [2.03]
0.066 [1.68]
A
1
0.028 [0.71]
0.022 [0.56] ₂
1
6
0.098 [2.49]
0.082 [2.08]
3
4
5
0.055 [1.40]
0.045 [1.14]
0.105 [2.67]
0.095 [2.41]
0.070 [1.78]
0.060 [1.52]
5 PLS
K
6
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible.
C
3
E
5
B
4
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION  725 E.Walnut St., Garland, TX 75040  [phone]  Fax [phone]
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM