HAL1000 Datasheet, PDF (21/28 Pages) Micronas – Programmable Hall Switch

DATA SHEET
HAL 1000
4. Application Notes
4.1. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage, and between ground and the output pin. In
addition, the input of the controller unit should be
pulled-down with a resistor of 10 kΩ or more and a
ceramic 4.7 nF capacitor.
WARNING:
PLEASE NOTE THAT DURING PROGRAM-
MING, THE SENSOR WILL BE SUPPLIED
REPEATEDLY WITH THE PROGRAMMING
VOLTAGE OF 12.5 V FOR 100 MS. ALL
COMPONENTS CONNECTED TO THE V_DD
LINE AT THIS TIME MUST BE ABLE TO
RESIST THIS VOLTAGE.
V_DD
4.7 nF
HAL1000
OUT
4.7 nF
4.7 nF
GND
µC
≥10 kΩ
Fig. 4–1: Recommended application circuit
4.2. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combi-
nations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.
The HAL8xx and HAL1000 contain the same tempera-
ture compensation circuits. If an optimal setting for the
HAL8xx is already available, the same settings may be
used for the HAL1000.
Temperature
TC
Coefficient of
Magnet (ppm/K)
400
31
300
28
200
24
100
21
0
18
−50
17
−90
16
−130
15
−170
14
−200
13
−240
12
−280
11
−320
10
−360
9
−410
8
−450
7
−500
6
−550
5
−600
4
−650
3
−700
2
−750
1
−810
0
−860
−1
−910
−2
−960
−3
−1020
−4
−1070
−5
−1120
−6
−1180
−7
−1250
−8
−1320
−9
−1380
−10
−1430
−11
Micronas
March 4, 2004; 6251-528-1DS
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