HAL1XY_1 Datasheet, PDF (2/2 Pages) Micronas – Low-Cost Hall-Effect Sensor Family

PRODUCT INFORMATION
HAL 1xy
April/2009
Family Overview
Type
HAL 101
HAL 102
HAL 103
HAL 104
HAL 106
HAL 107
HAL 108
HAL 109
Switching Behavior
unipolar
latching
latching
latching
unipolar
unipolar
unipolar
unipolar
Sensitivity
low
high
medium
low
high
low
medium
high
System Architecture
The Hall-effect sensor is a monolithic inte-
grated circuit that switches in response to
magnetic fields. If a magnetic field with flux
lines perpendicular to the sensitive area is
applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this
field. The Hall voltage is compared with the
actual threshold level in the comparator.
The temperature-dependent bias is used to
compensate the decreasing induction of
magnets at higher temperatures. If the mag-
netic field exceeds the threshold levels, the
open-drain output switches to the appropri-
ate state. The built-in hysteresis eliminates
oscillation and provides switching behavior
of output without bouncing.
Magnetic offset caused by mechanical
stress is compensated for by using the
“switching offset compensation technique”.
V_DD
1
GND
2
Reverse
Voltage &
Overvoltage
Protection
HAL 1xy
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Hall Plate
Switch
Comparator
Output
OUT
3
Clock
Fig. 1: Block diagram of the HAL 1xy
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ered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Product or
development sample availability and delivery are exclusively subject to our respective order confirmation form. By
this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third
parties which may result from its use.
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without the express written consent of Micronas GmbH.
Edition April 14, 2009; Order No. PI000134_001EN
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