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N25Q256A13EF840E Datasheet, PDF (81/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A | |||
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3V, 256Mb: Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
DC Characteristics and Operating Conditions
Table 39: DC Current Characteristics and Operating Conditions
Parameter
Symbol
Test Conditions
Min Max Unit
Input leakage current
ILI
â
Output leakage current
Standby current
Standby current
ILO
â
ICC1
S = VCC, VIN = VSS or VCC
â
ICC1
S = VCC, VIN = VSS or VCC
â
(automotive) 1
Operating current
(fast-read extended I/O)
ICC3
C = 0.1VCC/0.9VCC at 108 MHz, DQ1 = â
open
C = 0.1VCC/0.9VCC at 54 MHz, DQ1 = â
open
Operating current (fast-read dual I/O)
C = 0.1VCC/0.9VCC at 108 MHz
â
Operating current (fast-read quad I/O)
Operating current (program)
ICC4
C = 0.1VCC/0.9VCC at 108 MHz
â
S# = VCC
â
Operating current (write status register)
ICC5
Operating current (erase)
ICC6
S# = VCC
â
S# = VCC
â
±2
µA
±2
µA
100 µA
150 µA
15
mA
6
mA
18
mA
20
mA
20
mA
20
mA
20
mA
Note: 1. Automotive temperature range = â40°C to 125°C; See also the Part Number Information
table.
Table 40: DC Voltage Characteristics and Operating Conditions
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
VIL
VIH
VOL
VOH
Conditions
IOL = 1.6mA
IOH = â100µA
Min
â0.5
0.7VCC
â
VCC - 0.2
Max
0.3VCC
VCC + 0.4
0.4
â
Unit
V
V
V
V
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. Q 05/13 EN
81
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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