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N25Q064A13EF640F Datasheet, PDF (80/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase | |||
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64Mb, 3V, Multiple I/O Serial Flash Memory
Revision History
Revision History
Rev. K â 08/2013
⢠Added T-PBGA-24b05 6mm x 8mm, 4 x 6 ball array ballout and package information
Rev. J â 01/2013
⢠Updated HOLD# description in Signal Description table
⢠Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions
⢠Updated the READ ID Operation figure in READ ID Operations
⢠Updated ERASE Operations
⢠Added link to part number chart in Part Number Ordering Information
⢠Updated part numbers in Features
Rev. I â 10/2012
⢠Updated tBE from 250 to 120 in AC Characteristics and Operating Conditions.
Rev. H â 07/2012
⢠Updated part numbers
Rev. G â 06/2012
⢠Updated tSSE specification in AC Reset Conditions table
Rev. F, Production â 10/2011
⢠Micron rebrand
Rev. E, Production â 07/2011
⢠Revised SO8W package dimensions
Rev. D â 01/2011
⢠Revised SO8W package dimensions
Rev. C â 11/2010
⢠In Ordering Information, changed the following: â E = Uniform (Uniform 4KB sub-
sector erase and Uniform 64KB sector erase)
Rev. B â 10/2010
⢠Updated package information
Rev. A â 05/2010
⢠Initial release
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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