MT4HTF1664AY Datasheet, PDF (8/19 Pages) Micron Technology – DDR2 SDRAM UDIMM

128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 8: Absolute Maximum Ratings
Symbol
V_DD/V_DDQ
V_IN, V_OUT
I_I
I_OZ
I_VREF
T_A
T_C1
Parameter
V_DD/V_DDQ supply voltage relative to V_SS
Voltage on any pin relative to V_SS
Input leakage current; Any input 0V ≤ V_IN ≤ V_DD; Address inputs, RAS#,
V_REF input 0V ≤ V_IN ≤ 0.95V; (All other pins not ^{CAS#, WE#, S#, CKE,}
under test = 0V)
ODT, BA
CK, CK#
DM
Output leakage current; 0V ≤ V_OUT ≤ V_DDQ; DQ DQ, DQS, DQS#
and ODT are disabled
V_REF leakage current; V_REF = valid V_REF level
Module ambient operating temperature
Commercial
Industrial
DDR2 SDRAM component operating tempera-
ture²
Commercial
Industrial
Min
–0.5
–0.5
–20
–10
–5
–5
–8
0
–40
0
–40
Max
2.3
2.3
20
Units
V
V
µA
10
5
5
µA
8
µA
70
°C
85
°C
85
°C
95
°C
Notes:
1. The refresh rate is required to double when T_C exceeds 85°C.
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
8
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