M29W256GH70ZS6E Datasheet, PDF(68/76 Page) Micron Technology

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M29W256GH70ZS6E Datasheet, PDF (68/76 Pages) Micron Technology – Parallel NOR Flash Embedded Memory

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256Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

Figure 23: CE#-Controlled Program AC Timing (16-Bit Mode)

A[MAX:0]

WE#

3rd Cycle 4th Cycle

tWC

555h

tAS

tAH

tWS

tWH

Data Polling

OE#

tGHEL

tCP

CE#

tCPH

DQ[14:0]/A-1

tDS

AOh

tDH

tWHWH1

DQ7# DOUT

Notes:

1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7. (See Data Polling Bit

[DQ7].)

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

PDF: 09005aef84bd3b68

m29w_256mb.pdf - Rev. C 7/13 EN

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