RC28F128J3F75A Datasheet, PDF (6/66 Pages) Micron Technology – Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Numonyx^® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
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Introduction
This document contains information pertaining to the Numonyx^® Embedded Flash
Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and
specifications.
Unless otherwise indicated throughout the rest of this document, the Numonyx^®
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as
J3 65 nm SBC.
The J3 65 nm SBC device provides improved mainstream performance with enhanced
security features, taking advantage of the high quality and reliability of the NOR-based
65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm
SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with
high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven
manufacturing experience and is ideal for code and data applications where high
density and low cost are required, such as in networking, telecommunications, digital
set top boxes, audio recording, and digital imaging. Numonyx Flash Memory
components also deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers
can take advantage of density upgrades and optimized write capabilities of future
Numonyx Flash Memory devices.
Nomenclature
J3 65 nm SBC Numonyx^® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
AMIN
AMAX
All Densities
All Densities
32 Mbit
64 Mbit
128 Mbit
AMIN = A0 for x8
AMIN = A1 for x16
AMAX = A21
AMAX = A22
AMAX = A23
Block
A group of flash cells that share common erase circuitry and erase simultaneously.
Clear
Indicates a logic zero (0)
Program
Writes data to the flash array
Set
Indicates a logic one (1)
VPEN
Refers to a signal or package connection name
V_PEN
Refers to timing or voltage levels
Datasheet
6
Jan 2011
208032-03