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MT48LC4M16A2B4-75 Datasheet, PDF (58/83 Pages) Micron Technology – SDR SDRAM
Figure 29: Random WRITE Cycles
T0
T1
T2
T3
CLK
64Mb: x4, x8, x16 SDRAM
WRITE Operation
Command
WRITE
WRITE
WRITE
WRITE
Address
Bank,
Col n
Bank,
Col a
Bank,
Col x
Bank,
Col m
DQ
DIN
DIN
DIN
DIN
Transitioning data
Don’t Care
Note: 1. Each WRITE command can be issued to any bank. DQM is LOW.
Figure 30: WRITE-to-READ
T0
T1
T2
T3
T4
T5
CLK
Command
WRITE
NOP
READ
NOP
NOP
NOP
Address
Bank,
Col n
Bank,
Col b
DQ
DIN
DIN
DOUT
DOUT
Transitioning data
Don’t Care
Note: 1. The WRITE command can be issued to any bank, and the READ command can be to any
bank. DQM is LOW. CL = 2 for illustration.
PDF: 09005aef80725c0b
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN
58
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