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| MT28F642D18 Datasheet, PDF (46/51 Pages) Micron Technology – FLASH MEMORY | |||
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ADVANCE
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
TWO-CYCLE PROGRAMMING/ERASE OPERATION
A0âA21 VIH
VIL
VIH
ADV# VIL
VIH
CE# VIL
VIH
OE# VIL
VIH
WE# VIL
VIH
DQ0âDQ15 VIL
VIH
RST# VIL
VIH
WP# VIL
VIPPH
VPP
VIPPLK
VIL
VALID ADDRESS
tAVS
tAVH
tVPH
tVP
VALID ADDRESS
tAS
tAH
tVS
VALID ADDRESS
tCS
tCH
tWOS
tWPH
High-Z
tRS
CMD
CMD/
DATA
tCH
tWB
CMD/
DATA
tDS
tRHS
STATUS
tRHH
tVPS
tVPPH
UNDEFINED
WRITE TIMING PARAMETERS
SYMBOL
tRS
tCS
tWP
tVP
tDS
tAS
tVS
tAVS
tCH
tDH
-70/-80
MIN
MAX
150
0
70
10
70
50
70
10
0
0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tAH
tAVH
tWPH
tRP
tRHS
tVPS
tWOS
tRHH
tVPPH
tWB
-70/-80
MIN
MAX UNITS
0
ns
3
ns
30
ns
100
ns
0
ns
200
ns
50
ns
0
ns
0
ns
tAA + 50 ns
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 â Rev. 3, Pub. 8/02
46
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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