MT18VDDF12872HG Datasheet, PDF (2/10 Pages) Micron Technology – DDR SDRAM SODIMM

1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
2 (S0#, S1#)
Table 3:
Part Numbers and Timing Parameters – 1GB
Base device: MT46V64M8,¹ 512Mb DDR SDRAM
Part Number²
MT18VDDF12872HG-40B__
MT18VDDF12872HY-40B__
MT18VDDF12872HG-335__
MT18VDDF12872HY-335__
MT18VDDF12872HG-26A__
MT18VDDF12872HG-265__
Module
Density
1GB
1GB
1GB
1GB
1GB
1GB
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-^tRCD-^tRP)
3-3-3
3-3-3
2.5-3-3
2.5-3-3
2-3-3
2.5-3-3
Notes:
1. Data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872HY-335F1.
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.