MT4HTF6464AY Datasheet, PDF (17/19 Pages) Micron Technology – DDR2 SDRAM UDIMM

128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
I_DD Specifications
Table 13: DDR2 I_DD Specifications and Conditions (Die Revision E) – 512MB (Continued)
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) com-
ponent data sheet
Parameter
-80E/
Symbol -800 -667 -53E -40E Units
Operating bank interleave read current: All device banks interleaving I_DD7
reads; I_OUT = 0mA; BL = 4, CL = CL (I_DD), AL = ^tRCD (I_DD) - 1 × ^tCK (I_DD); ^tCK
= ^tCK (I_DD), ^tRC = ^tRC (I_DD), ^tRRD = ^tRRD (I_DD), ^tRCD = ^tRCD (I_DD); CKE is
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
1760 1400 1320 1200 mA
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
17
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