MT40A4G4FSE-083E Datasheet, PDF (12/21 Pages) Micron Technology – TwinDie 1.2V DDR4 SDRAM

16Gb: x4, x8 TwinDie DDR4 SDRAM
Electrical Characteristics – AC and DC Output Measurement
Levels
Electrical Characteristics – AC and DC Output Measurement Levels
Single-Ended Outputs
Table 7: Single-Ended Output Levels
Parameter
Symbol DDR4-1600 to DDR4-3200 Unit
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output slew rate)
AC output low measurement level (for output slew rate)
V_OH(DC)
1.1 × V_DDQ
V
V_OM(DC)
0.8 × V_DDQ
V
V_OL(DC)
0.5 × V_DDQ
V
V_OH(AC)
(0.7 + 0.15) × V_DDQ
V
V_OL(AC)
(0.7 - 0.15) × V_DDQ
V
Note:
1. The swing of ±0.15 × V_DDQ is based on approximately 50% of the static single-ended
output peak-to-peak swing with a driver impedance of RZQ/7 and an effective test load
of 50Ω to V_TT = V_DDQ.
Using the same reference load used for timing measurements, output slew rate for fall-
ing and rising edges is defined and measured between V_OL(AC) and V_OH(AC) for single-
ended signals.
Table 8: Single-Ended Output Slew Rate Definition
Description
Single-ended output slew rate for rising edge
Single-ended output slew rate for falling edge
Measured
From
To
V_OL(AC)
V_OH(AC)
V_OH(AC)
V_OL(AC)
Figure 6: Single-ended Output Slew Rate Definition
TR_se
Defined by
[V_OH(AC) - V_OL(AC)]/ΔTR_se
[V_OH(AC) - V_OL(AC)]/ΔTF_se
V_OH(AC)
PDF: 09005aef85fd40a1
DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN
V_OL(AC)
TF_se
12
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