MT58L128L18F Datasheet, PDF (10/24 Pages) Micron Technology – 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM

2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note: 1) (0°C ≤ T_A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)
MAX
DESCRIPTION
CONDITIONS
Power Supply
Device selected; All inputs ≤ VIL or ≥ VIH;
Current: Operating
Cycle time ≥ ^tKC (MIN);
VDD = MAX; Outputs open
Power Supply
Current: Idle
Device selected; VDD = MAX;
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ ^tKC (MIN); Outputs open
CMOS Standby
Device deselected; VDD = MAX;
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs ≤ VIL or ≥ VIH;
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ ^tKC (MIN)
SYM TYP -6.8 -7.5 -8.5 -10 UNITS NOTES
IDD 65 265 245 225 150 mA 2, 3, 4
IDD1 20 70 65 65 50 mA 2, 3, 4
ISB2 0.5 10 10 10 10 mA 3, 4
ISB3 6 25 25 25 25 mA 3, 4
ISB4 20 70 65 65 50 mA 3, 4
NOTE:
1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
5. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
6. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
7. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
8. Typical values are measured at 3.3V, 25°C, and 15ns cycle time.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
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