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MT36VDDF12872 Datasheet, PDF (10/20 Pages) Micron Technology – DDR SDRAM RDIMM
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
Table 7: Absolute Maximum Ratings
Symbol
VDD/VDDQ
VIN, VOUT
II
IOZ
TA
Parameter
VDD/VDDQ supply voltage relative to VSS
Voltage on any pin relative to VSS
Input leakage current; Any input 0V ≤ VIN ≤ VDD;
VREF input 0V ≤ VIN ≤ 1.35V (All other pins not under
test = 0V)
Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ are
disabled
DRAM ambient operating temperature1
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DQ, DQS
Commercial
Industrial
Min
–1.0
–0.5
–5
–10
–10
0
–40
Max
+3.6
+3.2
+5
Units
V
V
µA
+10
+10
µA
+70
°C
+85
°C
Notes: 1. For further information, refer to technical note TN-00-08: “Thermal Applications,” available
on Micron’s Web site.
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
10
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