MT5VDDT3272AG Datasheet, PDF (1/12 Pages) Micron Technology – DDR SDRAM UDIMM

64MB, 128MB, 256MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Features
DDR SDRAM UDIMM
MT5VDDT872A – 64MB¹
MT5VDDT1672A – 128MB²
MT5VDDT3272A – 256MB²
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 184-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 64MB (8 Meg x 72), 128MB (16 Meg x 72), and
256MB (32 Meg x 72)
• Supports ECC error detection and correction
• VDD = VDDQ = +2.5V
(-40B: VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes:
64MB = 15.625µs and 128MB, 256MB = 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 1: 184-Pin UDIMM (MO-206 R/C C)
PCB height: 31.75mm (1.25in)
Options
• Operating temperature³
– Commercial (0°C ≤ T_A ≤ +70°C)
– Industrial (–40°C ≤ T_A ≤ +85°C)
• Package
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Marking
None
I
G
Y
-40B
-335
-262
-26A
-265
Notes: 1. End of life.
2. Not recommended for new designs.
3. Contact Micron for industrial temperature
module offerings.
Table 1: Key Timing Parameters
Speed
Grade
-40B
-335
-262
-26A
-265
Industry
Nomenclature
Data Rate (MT/s)
t_RCD
t_RP
CL = 3 CL = 2.5 CL = 2
(ns)
(ns)
t_RC
(ns)
Notes
PC3200
PC2700
PC2100
PC2100
PC2100
400
333
266
15
15
55
–
333
266
18
18
60
1
–
266
266
15
15
60
–
266
266
20
20
65
–
266
200
20
20
65
Notes: 1. The values of ^tRCD and ^tRP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
PDF: 09005aef808143d9/Source: 09005aef806e1c40
DD5C8_16_32x72A.fm - Rev. F 10/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.