MT48H8M32LF Datasheet, PDF (1/71 Pages) Micron Technology – 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Features
Mobile SDRAM
MT48H16M16LF – 4 Meg x 16 x 4 banks
MT48H8M32LF – 2 Meg x 32 x 4 banks
Features
• Fully synchronous; all signals registered on positive
edge of system clock
• VDD/VDDQ = 1.70–1.95V
• Internal, pipelined operation; column address can
be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, or continuous
page¹
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control refresh rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• 64ms refresh period (8,192 rows)
Options
• VDD/VDDQ
– 1.8V/1.8V
• Configuration
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
– 8 Meg x 32 (2 Meg x 32 x 4 banks)
• Plastic “green” package
– 54-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (8mm x 13mm)
• Timing – cycle time
– 7.5ns at CL = 3
– 8ns at CL = 3
• Power
– Standard IDD2P/IDD7
– Low IDD2P/IDD7
• Operating temperature range
– Commercial (0° to +70°C)
– Industrial (–40°C to +85°C)
• Design revision
Marking
H
16M16
8M32
BF
B5
-75
-8
None
L
None
IT
:G
Notes: 1. For continuous page burst, contact factory
for availability.
Table 1: Addressing
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
16 Meg x 16
4 Meg x 16 x 4
banks
8K
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
8 Meg x 32
2 Meg x 32 x 4
banks
8K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Clock Rate
(MHz)
Access Time Data
Speed
Setup
Grade CL = 2 CL = 3 CL = 2 CL = 3 Time
-75 104 133 8ns 6ns 1.5ns
-8
100 125 9ns 7ns 2.5ns
Data
Hold
Time
1ns
1ns
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF__1.fm - Rev F 4/07 EN
1
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©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.